The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2022
Filed:
Dec. 14, 2020
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Sarah McTaggart, Essex Junction, VT (US);
Qizhi Liu, Lexington, MA (US);
Vibhor Jain, Essex Junction, VT (US);
Mark Levy, Williston, VT (US);
Paula Fisher, Milton, VT (US);
James R. Elliott, Huntington, VT (US);
GlobalFoundries U.S. Inc., Santa Clara, CA (US);
Abstract
Device structures and fabrication methods for heterojunction bipolar transistors. Trench isolation regions are positioned in a semiconductor substrate to define active regions. A base layer includes first sections that are respectively positioned over the active regions and second sections that are respectively positioned over the trench isolation regions. Emitter fingers are respectively positioned on the first sections of the base layer. The first sections of the base layer include single-crystal semiconductor material, and the second sections of the base layer include polycrystalline semiconductor material. The second sections of the base layer are spaced in a vertical direction from the trench isolation regions to define a first cavity that extends about a perimeter of the base layer and second cavities that are connected to the first cavity.