The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2022

Filed:

Jan. 10, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Karthik Balakrishnan, Scarsdale, NY (US);

Pouya Hashemi, Purchase, NY (US);

Alexander Reznicek, Troy, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/07 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01); H01L 29/739 (2006.01); H01L 21/8234 (2006.01); G11C 7/06 (2006.01); G11C 11/4091 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0727 (2013.01); G11C 7/062 (2013.01); H01L 21/823456 (2013.01); H01L 21/823487 (2013.01); H01L 29/66136 (2013.01); H01L 29/66356 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); G11C 11/4091 (2013.01); H01L 21/823475 (2013.01); H01L 29/7391 (2013.01); H01L 29/861 (2013.01);
Abstract

An electrical device including a vertical transistor device connected to a vertical diode. The vertical diode connected transistor device including a vertically orientated channel. The vertical diode connected transistor device also includes a first diode source/drain region provided by an electrically conductive surface region of a substrate at a first end of the diode vertically orientated channel, and a second diode source/drain region present at a second end of the vertically orientated channel. The vertical diode also includes a diode gate structure in electrical contact with the first diode source/drain region.


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