The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2022

Filed:

Apr. 22, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kyuha Lee, Seongnam-si, KR;

Pilkyu Kang, Hwaseong-si, KR;

Seokho Kim, Hwaseong-si, KR;

Hoonjoo Na, Seoul, KR;

Kwangjin Moon, Hwaseong-si, KR;

Jaehyung Park, Anyang-si, KR;

Joohee Jang, Hwaseong-si, KR;

Yikoan Hong, Yongin-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/80 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/80001 (2013.01);
Abstract

A method of manufacturing a semiconductor device according to example embodiments includes: sequentially forming first through third insulating layers on a substrate; forming an opening by etching the first through third insulating layers; forming a conductive layer configured in the opening; forming a fourth insulating layer in the opening after the forming of the conductive layer; and removing a portion of an edge region of the substrate after the forming of the fourth insulating layer.


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