The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2022

Filed:

Mar. 07, 2019
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Xin Liu, Fremont, CA (US);

Fei Wang, Fremont, CA (US);

Rui Cheng, San Jose, CA (US);

Abhijit Basu Mallick, Fremont, CA (US);

Robert Jan Visser, Menlo Park, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); C23C 16/01 (2006.01); C23C 16/24 (2006.01); C23C 16/455 (2006.01); C23C 16/46 (2006.01); C23C 16/56 (2006.01); H01L 21/02 (2006.01); H01L 21/3205 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76837 (2013.01); C23C 16/01 (2013.01); C23C 16/24 (2013.01); C23C 16/45536 (2013.01); C23C 16/46 (2013.01); C23C 16/56 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/02532 (2013.01); H01L 21/32055 (2013.01); H01L 29/0649 (2013.01);
Abstract

Embodiments of the present disclosure relate to processes for filling trenches. The process includes depositing a first amorphous silicon layer on a surface of a layer and a second amorphous silicon layer in a portion of a trench formed in the layer, and portions of side walls of the trench are exposed. The first amorphous silicon layer is removed. The process further includes depositing a third amorphous silicon layer on the surface of the layer and a fourth amorphous silicon layer on the second amorphous silicon layer. The third amorphous silicon layer is removed. The deposition/removal cyclic processes may be repeated until the trench is filled with amorphous silicon layers. The amorphous silicon layers form a seamless amorphous silicon gap fill in the trench since the amorphous silicon layers are formed from bottom up.


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