The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2022

Filed:

Sep. 25, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Yu-Hsing Chang, Taipei, TW;

Ming Chyi Liu, Hsinchu, TW;

Shih-Chang Liu, Alian Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30655 (2013.01); H01L 21/308 (2013.01); H01L 28/90 (2013.01);
Abstract

In some methods, a first recess is etched in a selected region of a substrate. A first polymer liner is formed on sidewalls and a bottom surface of the first recess. A portion of the first polymer liner is removed from the bottom surface, and a remaining portion of the first polymer liner is left along the sidewalls. The first recess is deepened to establish a second recess while the remaining portion of the first polymer liner is left along the sidewalls. A first oxide liner is formed along the sidewalls and along sidewalls and a bottom surface of the second recess. A portion of the first oxide liner is removed from a bottom surface of the second recess, while a remaining portion of the first oxide liner is left on the sidewalls of the first recess and the sidewalls of the second recess.


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