The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2022

Filed:

Feb. 27, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Soichi Yamazaki, Yokkaichi Mie, JP;

Kazuhito Furumoto, Yokkaichi Mie, JP;

Kosuke Horibe, Yokkaichi Mie, JP;

Keisuke Kikutani, Yokkaichi Mie, JP;

Atsuko Sakata, Yokkaichi Mie, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/3213 (2006.01); H01L 21/311 (2006.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 21/0332 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/32136 (2013.01); H01L 21/32139 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract

According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The second film includes fluoride of a first metal element having a first boiling point of 800° C. or higher and fluoride of a second metal element having a second boiling point of 800° C. or higher. The second metal element is different from the first metal element. The method further includes etching the first film using the second film as an etching mask and etching gas that includes fluorine.


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