The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2022
Filed:
Jul. 02, 2018
Applicant:
Lg Chem, Ltd., Seoul, KR;
Inventors:
Woo Jae Jeong, Daejeon, KR;
You Jin Kyung, Daejeon, KR;
Byung Ju Choi, Daejeon, KR;
Bo Yun Choi, Daejeon, KR;
Kwang Joo Lee, Daejeon, KR;
Min Su Jeong, Daejeon, KR;
Assignee:
LG CHEM, LTD., Seoul, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01B 3/32 (2006.01); H01L 23/31 (2006.01); H01L 23/532 (2006.01); H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01B 3/30 (2006.01); G03F 7/40 (2006.01); G03F 7/30 (2006.01);
U.S. Cl.
CPC ...
H01B 3/32 (2013.01); G03F 7/40 (2013.01); H01B 3/30 (2013.01); H01L 21/561 (2013.01); H01L 23/31 (2013.01); H01L 23/532 (2013.01); H01L 23/5329 (2013.01); H01L 24/07 (2013.01); G03F 7/30 (2013.01); H01L 21/568 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/96 (2013.01);
Abstract
The present invention relates to a method for manufacturing an insulating layer which can minimize the degree of warpage caused by polymer shrinkage at the time of curing and secure the stability of a semiconductor chip located therein, and a method for manufacturing a semiconductor package using an insulating layer obtained from the manufacturing method of the insulating layer.