The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2022
Filed:
Jul. 23, 2018
Applicants:
Tamura Corporation, Tokyo, JP;
Novel Crystal Technology, Inc., Saitama, JP;
Inventor:
Kohei Sasaki, Saitama, JP;
Assignees:
Tamura Corporation, Tokyo, JP;
Novel Crystal Technology, Inc., Saitama, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/24 (2006.01); H01L 29/45 (2006.01); H01L 29/47 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01); H01L 21/02 (2006.01); H01L 21/443 (2006.01); H01L 21/465 (2006.01);
U.S. Cl.
CPC ...
H01L 29/247 (2013.01); H01L 29/45 (2013.01); H01L 29/47 (2013.01); H01L 29/66969 (2013.01); H01L 29/8613 (2013.01); H01L 29/872 (2013.01); H01L 21/0243 (2013.01); H01L 21/02414 (2013.01); H01L 21/02565 (2013.01); H01L 21/02592 (2013.01); H01L 21/02631 (2013.01); H01L 21/443 (2013.01); H01L 21/465 (2013.01);
Abstract
A diode includes an n-type semiconductor layer including an n-type GaO-based single crystal, and a p-type semiconductor layer including a p-type semiconductor in which a volume of an amorphous portion is higher than a volume of a crystalline portion. The n-type semiconductor layer and the p-type semiconductor layer form a pn junction.