The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2022
Filed:
May. 11, 2020
Applicant:
Advanced Silicon Group Technologies, Inc., Lincoln, MA (US);
Inventors:
Assignee:
Advanced Silicon Group Technologies, LLC, Lincoln, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); B01J 20/10 (2006.01); B01J 20/28 (2006.01); B82Y 20/00 (2011.01); B82Y 30/00 (2011.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 31/0236 (2006.01); H01M 4/134 (2010.01); H01M 4/36 (2006.01); H01M 4/38 (2006.01); H01L 29/16 (2006.01); C23C 14/34 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/3213 (2006.01); H01L 29/04 (2006.01); H01L 31/028 (2006.01); H01L 31/0352 (2006.01); H01M 4/04 (2006.01); H01M 4/1395 (2010.01); H01M 4/66 (2006.01); H01M 10/0525 (2010.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0669 (2013.01); B01J 20/10 (2013.01); B01J 20/28007 (2013.01); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); C23C 14/34 (2013.01); H01L 21/0234 (2013.01); H01L 21/02118 (2013.01); H01L 21/02164 (2013.01); H01L 21/02175 (2013.01); H01L 21/02244 (2013.01); H01L 21/02282 (2013.01); H01L 21/02307 (2013.01); H01L 21/02488 (2013.01); H01L 21/02513 (2013.01); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 21/2855 (2013.01); H01L 21/28568 (2013.01); H01L 21/3086 (2013.01); H01L 21/30604 (2013.01); H01L 21/32134 (2013.01); H01L 29/04 (2013.01); H01L 29/0676 (2013.01); H01L 29/16 (2013.01); H01L 31/028 (2013.01); H01L 31/0236 (2013.01); H01L 31/02363 (2013.01); H01L 31/0352 (2013.01); H01M 4/0492 (2013.01); H01M 4/134 (2013.01); H01M 4/366 (2013.01); H01M 4/386 (2013.01); H01M 4/1395 (2013.01); H01M 4/661 (2013.01); H01M 10/0525 (2013.01); H01M 2004/027 (2013.01); Y02E 10/50 (2013.01); Y10S 977/762 (2013.01);
Abstract
A process for etching a substrate comprising polycrystalline silicon to form silicon nanostructures includes depositing metal on top of the substrate and contacting the metallized substrate with an etchant aqueous solution comprising about 2 to about 49 weight percent HF and an oxidizing agent.