The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2022
Filed:
Aug. 31, 2020
Kabushiki Kaisha Toshiba, Tokyo, JP;
Yumi Fukuda, Tokyo, JP;
Koichi Harada, Tokyo, JP;
Yasushi Hattori, Kawasaki Kanagawa, JP;
Maki Yonetsu, Tokyo, JP;
Kenji Essaki, Kawasaki Kanagawa, JP;
Keiko Albessard, Yokohama Kanagawa, JP;
Yasuhiro Goto, Tokyo, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A structure includes: a β silicon nitride crystal phase; and a YMgSiON crystal phase. The structure gives a X-ray diffraction pattern by a θ-2θ method, the pattern having a ratio of a peak intensity of a (22-1) plane of the YMgSiON crystal phase to a peak intensity of a (200) plane of the β silicon nitride crystal phase, the peak intensity of the (200) plane being determined at a position of 2θ=27.0±1°, the peak intensity of the (22-1) plane being determined at a position of 2θ=30.3±1°, and the ratio being 0.001 or more and 0.01 or less.