The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2022

Filed:

Apr. 16, 2020
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Seiji Yasumoto, Tochigi, JP;

Masataka Sato, Tochigi, JP;

Shingo Eguchi, Atsugi, JP;

Kunihiko Suzuki, Isehara, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/683 (2006.01); H01L 21/67 (2006.01); H01L 51/00 (2006.01); H01L 29/786 (2006.01); B32B 38/10 (2006.01); H01L 51/50 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6836 (2013.01); H01L 21/67132 (2013.01); H01L 21/6835 (2013.01); H01L 29/786 (2013.01); H01L 51/003 (2013.01); B32B 38/10 (2013.01); H01L 51/0097 (2013.01); H01L 51/50 (2013.01); H01L 2221/6835 (2013.01); H01L 2221/68318 (2013.01); H01L 2221/68363 (2013.01); H01L 2221/68381 (2013.01); H01L 2221/68386 (2013.01); Y10T 156/1712 (2015.01);
Abstract

To improve peelability, yield in a peeling step, and yield in manufacturing a flexible device. A peeling method is employed which includes a first step of forming a peeling layer containing tungsten over a support substrate; a second step of forming, over the peeling layer, a layer to be peeled formed of a stack including a first layer containing silicon oxynitride and a second layer containing silicon nitride in this order and forming an oxide layer containing tungsten oxide between the peeling layer and the layer to be peeled; a third step of forming a compound containing tungsten and nitrogen in the oxide layer by heat treatment; and a fourth step of peeling the peeling layer from the layer to be peeled at the oxide layer.


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