The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2022
Filed:
May. 29, 2020
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/3065 (2006.01); H01L 21/28 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01J 37/3244 (2013.01); H01J 37/32366 (2013.01); H01J 37/32532 (2013.01); H01J 37/32715 (2013.01); H01L 21/28238 (2013.01); H01L 21/3065 (2013.01); H01L 21/31105 (2013.01); H01L 21/31116 (2013.01); H01L 21/31122 (2013.01); H01L 21/31138 (2013.01); H01L 21/32136 (2013.01); H01J 2237/334 (2013.01);
Abstract
A plasma etching method for plasma-etching an object including an etching target film and a patterned mask. The plasma etching method includes a first step of plasma-etching the etching target film using the mask, and a second step of depositing a silicon-containing film using plasma of a silicon-containing gas on at least a part of a side wall of the etching target film etched by the first step.