The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2022

Filed:

Dec. 13, 2018
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Satoru Kobayashi, Santa Clara, CA (US);

Lance Scudder, Sunnyvale, CA (US);

David Britz, San Jose, CA (US);

Soonam Park, Sunnyvale, CA (US);

Dmitry Lubomirsky, Cupertino, CA (US);

Hideo Sugai, A'ichi, JP;

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32311 (2013.01); H01J 37/3222 (2013.01); H01J 37/32201 (2013.01); H01J 37/32229 (2013.01); H01L 21/67017 (2013.01); H01J 2237/3341 (2013.01);
Abstract

Plasma is generated in a semiconductor process chamber by a plurality of microwave inputs with slow or fast rotation. Radial uniformity of the plasma is controlled by regulating the power ratio of a center-high mode and an edge-high mode of the plurality of microwave inputs into a microwave cavity. The radial uniformity of the generated plasma in a plasma chamber is attained by adjusting the power ratio for the two modes without inputting time-splitting parameters for each mode.


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