The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2022
Filed:
Sep. 13, 2019
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;
Abstract
A semiconductor device of an embodiment includes semiconductor layer including first and second planes, and in order from the first plane's side to the second plane's side, first region of first conductivity type, second region of second conductivity type, third region of second conductivity type having second conductivity type impurity concentration higher than the second region, fourth region of first conductivity type, and fifth region of second conductivity type, and including first and second trench on the first plane's side; first gate electrode in the first trench; first gate insulating film in contact with the fifth semiconductor region; second gate electrode in the second trench; second gate insulating film; a first electrode on the first plane; second electrode on the second plane; first gate electrode pad connected to the first gate electrode; and second gate electrode pad connected to the second gate electrode.