The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2022

Filed:

Apr. 23, 2020
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventor:

Chih-Hsiung Lee, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 29/423 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 27/11565 (2017.01); H01L 29/792 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/02636 (2013.01); H01L 21/28525 (2013.01); H01L 21/31111 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 27/11565 (2013.01); H01L 29/40117 (2019.08); H01L 29/4234 (2013.01); H01L 29/66545 (2013.01); H01L 29/66833 (2013.01); H01L 29/7926 (2013.01); H01L 21/02164 (2013.01); H01L 21/02271 (2013.01); H01L 21/31053 (2013.01);
Abstract

A memory device includes: first and second bit lines on a dielectric layer; first and second word lines between the first and second bit lines; a source line between the first and second word lines; a channel pillar penetrating through the first word line, the source line and the second word line, and connected to the first bit line, the source line, and the second bit line; a first charge storage structure surrounding a top surface and a bottom surface of the first word line and between a sidewall of the first word line and a lower portion of a sidewall of the channel pillar; and a second charge storage structure, surrounding a top surface and a bottom surface of the second word line and between a sidewall of the second word line and an upper portion of the sidewall of the channel pillar.


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