The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2022

Filed:

Jul. 31, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventor:

Wei-Lun Chen, Taipei, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 21/823878 (2013.01);
Abstract

A semiconductor structure comprises a substrate and a fin extruding from the substrate along a first direction, wherein the fin comprises a first conductive type semiconductive layer over the substrate, a second conductive type semiconductive layer stacking over the first conductive type semiconductive layer along the first direction, and a dielectric layer sandwiched by the first conductive type semiconductive layer and the second conductive type semiconductive layer providing electrical isolation along the first direction between the first conductive type semiconductive layer and the second conductive type semiconductive layer.


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