The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2022

Filed:

Jan. 14, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Werner Juengling, Meridian, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 23/31 (2006.01); H01L 23/053 (2006.01); H01L 23/29 (2006.01); H01L 23/538 (2006.01); H01L 21/56 (2006.01); H01L 21/04 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 21/8239 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/0425 (2013.01); H01L 21/568 (2013.01); H01L 21/76805 (2013.01); H01L 23/053 (2013.01); H01L 23/291 (2013.01); H01L 23/3128 (2013.01); H01L 23/538 (2013.01); H01L 23/5329 (2013.01); H01L 23/5381 (2013.01); H01L 23/5389 (2013.01); H01L 24/19 (2013.01); H01L 21/8239 (2013.01);
Abstract

Some embodiments include methods of forming integrated assemblies. First conductive structures are formed within an insulative support material and are spaced along a first pitch. Upper regions of the first conductive structures are removed to form first openings extending through the insulative support material and over lower regions of the first conductive structures. Outer lateral peripheries of the first openings are lined with spacer material. The spacer material is configured as tubes having second openings extending therethrough to the lower regions of the first conductive structures. Conductive interconnects are formed within the tubes. Second conductive structures are formed over the spacer material and the conductive interconnects. The second conductive structures are spaced along a second pitch, with the second pitch being less than the first pitch. Some embodiments include integrated assemblies.


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