The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2022
Filed:
Nov. 22, 2019
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Luan C. Tran, Meridian, ID (US);
Raghupathy Giridhar, San Jose, CA (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 27/105 (2006.01); H01L 21/033 (2006.01); H01L 21/3213 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0274 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/31111 (2013.01); H01L 21/31133 (2013.01); H01L 21/32139 (2013.01); H01L 27/105 (2013.01); H01L 27/1052 (2013.01);
Abstract
Embodiments of a method for device fabrication by reverse pitch reduction flow include forming a first pattern of features above a substrate and forming a second pattern of pitch-multiplied spacers subsequent to forming the first pattern of features. In embodiments of the invention the first pattern of features may be formed by photolithography and the second pattern of pitch-multiplied spacers may be formed by pitch multiplication. Other methods for device fabrication are provided.