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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11348788 B1

PDFFull Text
Date of Patent:
May. 31, 2022

Filed:

Nov. 22, 2019

Methods for device fabrication using pitch reduction

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Luan C. Tran, Meridian, ID (US);

Raghupathy Giridhar, San Jose, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

TraskBritt

Primary Examiner:

Andres Munoz

Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 27/105 (2006.01); H01L 21/033 (2006.01); H01L 21/3213 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0274 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/31111 (2013.01); H01L 21/31133 (2013.01); H01L 21/32139 (2013.01); H01L 27/105 (2013.01); H01L 27/1052 (2013.01);
Abstract

Embodiments of a method for device fabrication by reverse pitch reduction flow include forming a first pattern of features above a substrate and forming a second pattern of pitch-multiplied spacers subsequent to forming the first pattern of features. In embodiments of the invention the first pattern of features may be formed by photolithography and the second pattern of pitch-multiplied spacers may be formed by pitch multiplication. Other methods for device fabrication are provided.

Find Patent Forward Citations

Tran, Luan. (2022). Methods for device fabrication using pitch reduction (U.S. Patent No. 11348788). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11348788

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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