The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2022

Filed:

Sep. 05, 2019
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Satoru Kobayashi, Sunnyvale, CA (US);

Hideo Sugai, A'ichi, JP;

Denis Ivanov, St Peterburg, RU;

Lance Scudder, Sunnyvale, CA (US);

Dmitry Lubomirsky, Cupertino, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/02 (2006.01); H05B 6/64 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02252 (2013.01); H01J 37/32192 (2013.01); H01J 37/32201 (2013.01); H01J 37/32229 (2013.01); H01J 37/32311 (2013.01); H05B 6/6402 (2013.01);
Abstract

Methods and apparatus provide plasma generation for semiconductor process chambers. In some embodiments, the plasma is generated by a system that may comprise a process chamber having at least two upper microwave cavities separated from a lower microwave cavity by a metallic plate with a plurality of radiation slots, at least one microwave input port connected to a first one of the at least two upper microwave cavities, at least two microwave input ports connected to a second one of the at least two upper microwave cavities, and the lower microwave cavity receives radiation through the plurality of radiation slots in the metallic plate from both of the at least two upper microwave cavities, the lower microwave cavity is configured to form an electric field that provides uniform plasma distribution in a process volume of the process chamber.


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