The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2022
Filed:
Jan. 25, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Toru Tanzawa, Adachi, JP;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G11C 16/04 (2006.01); G11C 11/56 (2006.01); G11C 16/34 (2006.01); H01L 27/11524 (2017.01); H01L 27/11556 (2017.01); H01L 27/1157 (2017.01); H01L 27/11582 (2017.01); G11C 11/00 (2006.01); H01L 29/51 (2006.01); H01L 27/1159 (2017.01); H01L 27/11597 (2017.01);
U.S. Cl.
CPC ...
G06F 3/0613 (2013.01); G06F 3/064 (2013.01); G06F 3/0625 (2013.01); G06F 3/0656 (2013.01); G06F 3/0679 (2013.01); G11C 11/005 (2013.01); G11C 11/5628 (2013.01); G11C 11/5635 (2013.01); G11C 11/5642 (2013.01); G11C 11/5657 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01); G11C 16/3459 (2013.01); H01L 27/1157 (2013.01); H01L 27/1159 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); H01L 27/11597 (2013.01); H01L 29/516 (2013.01);
Abstract
Some embodiments include apparatuses, and methods of forming and operating the apparatuses. Some of the apparatuses include a conductive line, non-volatile memory cells of a first memory cell type, the non-volatile memory cells coupled in series among each other, and an additional non-volatile memory cell of a second memory cell type coupled to the conductive line and coupled in series with the non-volatile memory cells of the first memory cell type. The second memory cell type is different from the first memory cell type.