The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2022
Filed:
Apr. 01, 2020
Applicant:
Inpria Corporation, Corvallis, OR (US);
Inventors:
Jason K. Stowers, Corvallis, OR (US);
Andrew Grenville, Corvallis, OR (US);
Assignee:
Inpria Corporation, Corvallis, OR (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/11 (2006.01); G03F 7/00 (2006.01); H01L 21/027 (2006.01); G03F 7/32 (2006.01); H01L 21/32 (2006.01); H01L 21/033 (2006.01); H01L 21/306 (2006.01); G03F 7/004 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0035 (2013.01); G03F 7/0045 (2013.01); G03F 7/11 (2013.01); G03F 7/32 (2013.01); G03F 7/325 (2013.01); H01L 21/027 (2013.01); H01L 21/0274 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/30625 (2013.01); H01L 21/32 (2013.01);
Abstract
High etch contrast materials provide the basis for using pre-patterned template structure with a template hardmask having periodic holes and filler within the holes that provides the basis for rapidly obtaining high resolution patterns guided by the template and high etch contrast resist. Methods are described for performing the radiation lithography, e.g., EUV radiation lithography, using the pre-patterned templates. Also, methods are described for forming the templates. The materials for forming the templates are described.