The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2022
Filed:
Apr. 29, 2020
Applicant:
Hefechip Corporation Limited, Sai Ying Pun, HK;
Inventors:
Hong-Hui Hsu, Tarrytown, NY (US);
Wei-Chuan Chen, Scarsdale, NY (US);
Qinli Ma, Mt Kisco, NY (US);
Shu-Jen Han, Armonk, NY (US);
Assignee:
HeFeChip Corporation Limited, Sai Ying Pun, HK;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01); H01F 41/32 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/161 (2013.01); H01F 10/3254 (2013.01); H01F 10/3286 (2013.01); H01F 41/32 (2013.01); H01L 27/228 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract
A semiconductor memory structure includes a substrate, a magnetic tunneling junction (MTJ) stack disposed on the substrate, and an encapsulation layer surrounding the MTJ stack. The encapsulation layer comprises an outer silicon oxynitride layer with a composition of SiONand an inner silicon oxynitride layer with a composition of SiON, wherein x1/y1>x2/y2.