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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11342454 B1

PDFFull Text
Date of Patent:
May. 24, 2022

Filed:

Jun. 22, 2020

Semiconductor device and method

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chia-Ling Chan, New Taipei, TW;

Meng-Yueh Liu, Taoyuan, TW;

Wei-Ken Lin, Tainan, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Fazli Erdem

Int. Cl.
CPC ...
H01L 21/22 (2006.01); H01L 21/31 (2006.01); H01L 21/82 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 21/311 (2006.01); H01L 21/3115 (2006.01); H01L 21/225 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7833 (2013.01); H01L 21/2254 (2013.01); H01L 21/31111 (2013.01); H01L 21/31133 (2013.01); H01L 21/31144 (2013.01); H01L 21/31155 (2013.01); H01L 21/823821 (2013.01); H01L 29/0649 (2013.01); H01L 29/6656 (2013.01); H01L 29/66492 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01);
Abstract

In accordance with some embodiments, a method is provided. The method includes: forming a semiconductor fin protruding from a substrate; depositing a spacer layer over the semiconductor fin; after the depositing the spacer layer over the semiconductor fin, implanting a first dopant in the spacer layer and depositing a dopant layer of the first dopant on the spacer layer in alternating repeating steps; removing the dopant layer; and performing a thermal anneal process to drive the first dopant into the semiconductor fin from the spacer layer.

Find Patent Forward Citations

Chan, Chia-Ling. (2022). Semiconductor device and method (U.S. Patent No. 11342454). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11342454

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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