The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Nov. 27, 2019
Applicant:

Ricoh Company, Ltd., Tokyo, JP;

Inventors:

Yukiko Abe, Kanagawa, JP;

Yuki Nakamura, Tokyo, JP;

Shinji Matsumoto, Kanagawa, JP;

Yuji Sone, Kanagawa, JP;

Naoyuki Ueda, Kanagawa, JP;

Ryoichi Saotome, Kanagawa, JP;

Minehide Kusayanagi, Kanagawa, JP;

Assignee:

RICOH COMPANY, LTD., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); C23C 14/34 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66742 (2013.01); C23C 14/3421 (2013.01); H01L 21/02175 (2013.01); H01L 21/02266 (2013.01);
Abstract

A sputtering target for an insulating oxide film, the sputtering target including a sintered body including a lanthanum oxide and at least one selected from the group consisting of a beryllium oxide, a magnesium oxide, a calcium oxide, a strontium oxide, and a barium oxide, wherein lanthanum has highest molar ratio among elements other than oxygen contained in the sintered body.


Find Patent Forward Citations

Abe, Yukiko. (2022). Sputtering target for insulating oxide film, method for forming insulating oxide film, and method for producing field-effect transistor (U.S. Patent No. 11342447). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11342447

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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