The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2022
Filed:
Nov. 25, 2019
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Ralf Siemieniec, Villach, AT;
Thomas Aichinger, Faak am See, AT;
Iris Moder, Villach, AT;
Francisco Javier Santos Rodriguez, Villach, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Carsten von Koblinski, Villach, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 29/16 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4966 (2013.01); H01L 21/02244 (2013.01); H01L 21/02258 (2013.01); H01L 21/049 (2013.01); H01L 29/1608 (2013.01); H01L 29/407 (2013.01); H01L 29/4236 (2013.01); H01L 29/42376 (2013.01); H01L 29/45 (2013.01); H01L 29/66068 (2013.01); H01L 29/7813 (2013.01);
Abstract
A silicon carbide device includes a silicon carbide substrate having a body region and a source region of a transistor cell. Further, the silicon carbide device includes a titanium carbide gate electrode of the transistor cell.