The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Jul. 30, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Nuo Xu, Milpitas, CA (US);

Zhiqiang Wu, Hsinchu County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 27/1159 (2017.01); H01L 27/11597 (2017.01); G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
H01L 29/40111 (2019.08); G11C 11/221 (2013.01); G11C 11/223 (2013.01); H01L 27/1159 (2013.01); H01L 27/11597 (2013.01); H01L 29/512 (2013.01); H01L 29/513 (2013.01); H01L 29/6684 (2013.01); H01L 29/66666 (2013.01); H01L 29/66795 (2013.01); H01L 29/78391 (2014.09); G11C 11/2259 (2013.01); H01L 29/517 (2013.01); H01L 29/785 (2013.01); H01L 29/7853 (2013.01);
Abstract

A method of manufacturing a semiconductor device is disclosed. The method includes providing a substrate including a channel region for conducting current; shaping the substrate to form a protruding plane, a bottom plane and a side plane connected between the protruding plane and the bottom plane for the channel region; forming an oxide layer covering the channel region; forming a ferroelectric material strip, extending in a first direction, on a protruding plane of the oxide layer; and forming a gate strip, extending in a second direction orthogonal with the first direction, on the ferroelectric material strip and a side plane and a bottom plane of the oxide layer.


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