The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Dec. 16, 2020
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventor:

Masaru Yano, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2436 (2013.01); G11C 13/004 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/0069 (2013.01); H01L 27/249 (2013.01); H01L 45/1206 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/145 (2013.01); H01L 45/16 (2013.01);
Abstract

Provided is a resistive random-access memory device, including: multiple pillars, extending in a vertical direction with respect to a main surface of a substrate; multiple bit lines, extending in a horizontal direction with respect to the main surface of the substrate; and a memory cell, formed at an intersection of the pillars and the bit lines. The memory cell includes a gate insulating film formed on an outer periphery of the pillars, a semiconductor film formed on an outer periphery of the gate insulating film and providing a channel region, and a variable resistance element formed on a part of an outer periphery of the semiconductor film. An electrode region of an outer periphery of the variable resistance element is connected to one of a pair of adjacent bit lines, and the semiconductor film is connected to the other of the pair of adjacent bit lines.


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