The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Jul. 09, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chun-Chieh Fang, Zhongpu Township, TW;

Ming-Chi Wu, Kaohsiung, TW;

Ji-Heng Jiang, Tainan, TW;

Chi-Yuan Wen, Tainan, TW;

Chien-Nan Tu, Kaohsiung, TW;

Yu-Lung Yeh, Kaohsiung, TW;

Shih-Shiung Chen, Tainan, TW;

Kun-Yu Lin, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14629 (2013.01); H01L 27/1463 (2013.01); H01L 27/14621 (2013.01); H01L 27/14645 (2013.01); H01L 27/14685 (2013.01);
Abstract

An image sensor device is provided. The image sensor device includes a semiconductor substrate having a first side, a second side opposite to the first side, and at least one light-sensing region close to the first side. The image sensor device includes a dielectric feature covering the second side and extending into the semiconductor substrate. The dielectric feature in the semiconductor substrate surrounds the light-sensing region. The image sensor device includes a reflective layer in the dielectric feature in the semiconductor substrate, wherein a top portion of the reflective layer protrudes away from the second side, and a top surface of the reflective layer and a top surface of the insulating layer are substantially coplanar.


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