The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Jul. 20, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Kuo-Ming Wu, Zhubei, TW;

Kuan-Liang Liu, Pingtung, TW;

Wen-De Wang, Minsyong Township, TW;

Yung-Lung Lin, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/00 (2006.01); H01L 23/58 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 25/18 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 25/50 (2013.01); H01L 23/585 (2013.01); H01L 24/29 (2013.01); H01L 24/66 (2013.01); H01L 24/69 (2013.01); H01L 24/83 (2013.01); H01L 24/89 (2013.01); H01L 23/3114 (2013.01); H01L 23/564 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/1161 (2013.01); H01L 2224/1162 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11845 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/17517 (2013.01); H01L 2224/2745 (2013.01); H01L 2224/2761 (2013.01); H01L 2224/2762 (2013.01); H01L 2224/27462 (2013.01); H01L 2224/27845 (2013.01); H01L 2224/29011 (2013.01); H01L 2224/29012 (2013.01); H01L 2224/29015 (2013.01); H01L 2224/29019 (2013.01); H01L 2224/29035 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/73103 (2013.01); H01L 2224/73203 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/81895 (2013.01); H01L 2224/8392 (2013.01); H01L 2224/83193 (2013.01); H01L 2224/83815 (2013.01); H01L 2224/83895 (2013.01); H01L 2224/83935 (2013.01); H01L 2224/83951 (2013.01);
Abstract

Some embodiments relate to a three-dimensional (3D) integrated circuit (IC). The 3D IC includes a first IC die comprising a first semiconductor substrate, and a first interconnect structure over the first semiconductor substrate. The 3D IC also includes a second IC die comprising a second semiconductor substrate, and a second interconnect structure that separates the second semiconductor substrate from the first interconnect structure. A seal ring structure separates the first interconnect structure from the second interconnect structure and perimetrically surrounds a gas reservoir between the first IC die and second IC die. The seal ring structure includes a sidewall gas-vent opening structure configured to allow gas to pass between the gas reservoir and an ambient environment surrounding the 3D IC.


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