The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2022
Filed:
Jul. 23, 2020
The Regents of the University of Michigan, Ann Arbor, MI (US);
Mattison Rose, Ann Arbor, MI (US);
Kira Barton, Ann Arbor, MI (US);
Neil Dasgupta, Ann Arbor, MI (US);
Lauren Ransohoff, Brookline, MA (US);
Ellis Herman, Cambridge, MA (US);
Orlando Trejo, Ann Arbor, MI (US);
Carli Huber, Norwalk, CT (US);
Tae H. Cho, Ann Arbor, MI (US);
Eric Kazyak, Ann Arbor, MI (US);
Christopher P. Pannier, Ann Arbor, MI (US);
The Regents of the University of Michigan, Ann Arbor, MI (US);
Abstract
An integrated electrohydrodynamic jet printing and spatial atomic layer deposition system for conducting nanofabrication includes an electrohydrodynamic jet printing station that includes an E-jet printing nozzle, a spatial atomic layer deposition station that includes a zoned ALD precursor gas distributor that discharges linear zone-separated first and second ALD precursor gases, a heatable substrate plate supported on a motion actuator controllable to move the substrate plate in three dimensions, and a conveyor on which the motion actuator is supported. The conveyor is operative to move the motion actuator between the electrohydrodynamic jet printing station and the spatial atomic layer deposition station so that the substrate plate is conveyable between a printing window of the E-jet printing nozzle and a deposition window of the zoned ALD precursor gas distributor, respectively. A method of conducting area-selective atomic layer deposition is also disclosed.