The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Jun. 19, 2020
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Yi-Chun Liu, Hsinchu, TW;

Wei Jie Chen, Hsinchu, TW;

Ching Ting Lu, New Taipei, TW;

Zheng Wu, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G06F 11/10 (2006.01); G06F 11/07 (2006.01); G06F 11/30 (2006.01); G11C 16/08 (2006.01); G06F 12/0882 (2016.01); G11C 16/34 (2006.01); G11C 16/14 (2006.01); G06F 12/02 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1044 (2013.01); G06F 11/076 (2013.01); G06F 11/1068 (2013.01); G06F 11/3037 (2013.01); G06F 12/0246 (2013.01); G06F 12/0882 (2013.01); G11C 16/08 (2013.01); G11C 16/14 (2013.01); G11C 16/3431 (2013.01);
Abstract

Systems, methods, and apparatus including computer-readable mediums for managing open blocks in memory systems such as NAND flash memory devices are provided. In one aspect, a memory system includes a memory and a memory controller. The memory includes multiple blocks each having a plurality of word lines. The memory controller is coupled to the memory and configured to: evaluate a read disturbance level of an open block, the open block having one or more programmed word lines and one or more blank word lines, and in response to determining that the read disturbance level of the open block is beyond a threshold level, manage each memory cell in at least one of the blank word lines to have a smaller data storing capacity than each memory cell in at least one of the one or more programmed word lines so as to reduce impact of read disturbance.


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