The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2022
Filed:
Mar. 22, 2019
University of Electronic Science and Technology of China, Sichuan, CN;
Chao Wang, Sichuan, CN;
Xueke Gou, Sichuan, CN;
Jing Jiang, Sichuan, CN;
Jun Hu, Sichuan, CN;
Zezhan Zhang, Sichuan, CN;
Yang Yang, Sichuan, CN;
Ying Duan, Sichuan, CN;
Congjun Wu, Sichuan, CN;
Yueming Wang, Sichuan, CN;
UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA, Sichuan, CN;
Abstract
A real-time monitoring microscopic imaging system for nitride MOCVD (metal organic chemical vapor deposition) epitaxial growth mode includes an observation window, an imaging lens set, a CCD (charge coupled device) camera, an image capture card and an image storage and display device, wherein: the observation window is provided at a top portion of a graphite carrier in an MOCVD reaction chamber and is formed by a thicker quartz glass to prevent temperature in the reaction chamber from damaging the lenses. The microscopic imaging system provided by the present invention has the resolution better than 1 μm, is able to distinguish the 2D growth mode and the 3D growth mode, observe whether the surface of the epitaxial wafer has screw dislocations in the MOCVD process, so as to observe the growth mode of the MOCVD epitaxial wafer in real time during the growth process.