The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2022

Filed:

Nov. 19, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Srinivas Pulugurtha, Boise, ID (US);

Jaydip Guha, Boise, ID (US);

Scott E. Sills, Boise, ID (US);

Yi Fang Lee, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 27/06 (2006.01); H01L 27/108 (2006.01); H01L 29/24 (2006.01); H01L 21/8234 (2006.01); H01L 27/11502 (2017.01);
U.S. Cl.
CPC ...
H01L 29/1033 (2013.01); H01L 21/823412 (2013.01); H01L 27/0629 (2013.01); H01L 27/10805 (2013.01); H01L 27/11502 (2013.01); H01L 29/24 (2013.01);
Abstract

Some embodiments include a transistor having an active region containing semiconductor material. The semiconductor material includes at least one element selected from Group 13 of the periodic table in combination with at least one element selected from Group 16 of the periodic table. The active region has a first region, a third region offset from the first region, and a second region between the first and third regions. A gating structure is operatively adjacent to the second region. A first carrier-concentration-gradient is within the first region, and a second carrier-concentration-gradient is within the third region. Some embodiments include methods of forming integrated assemblies.


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