The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2022
Filed:
Jun. 12, 2019
International Business Machines Corporation, Armonk, NY (US);
Zhenxing Bi, Niskayuna, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Juntao Li, Cohoes, NY (US);
Peng Xu, Guilderland, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A method is presented for forming a semiconductor device. The method includes forming source/drain over a semiconductor substrate, forming a sacrificial layer over the source/drain, and forming an inter-level dielectric (ILD) layer over the sacrificial layer. The method further includes forming trenches that extend partially into the sacrificial layer, removing the sacrificial layer to expose an upper surface of the source/drain, and filling the trenches with at least one conducting material. The sacrificial layer is germanium (Ge) and the at least one conducting material includes three conducting materials.