The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2022

Filed:

Nov. 19, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Zhi Qi Huang, Shanghai, CN;

Wei Lu Chu, Shanghai, CN;

Dong Pan, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4076 (2006.01); G11C 7/22 (2006.01); G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4076 (2013.01); G11C 7/22 (2013.01); G11C 7/222 (2013.01); G11C 11/221 (2013.01); G11C 11/2293 (2013.01);
Abstract

Methods, systems, and devices for timing signal delay for a memory device are described. In some memory devices, operations for accessing memory cells may be performed with timing that is asynchronous relative to an input signal. To support asynchronous timing, a memory device may include delay components that support generating a timing signal having aspects that are delayed relative to an input signal. A memory device may include delay components having a configurable impedance based at least in part on one or more fabrication characteristics of the memory device, one or more operating conditions of the memory device, one or more bias voltages, or a combination thereof.


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