The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2022

Filed:

Oct. 29, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Garming Liang, Hsinchu, TW;

En-Hsiang Yeh, Hsin-chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H03K 17/687 (2006.01); H03K 17/16 (2006.01); H01L 29/36 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H03K 17/6871 (2013.01); H01L 27/0629 (2013.01); H01L 29/36 (2013.01); H01L 29/66 (2013.01); H01L 29/78 (2013.01); H03K 17/161 (2013.01);
Abstract

In a communication system, a communication terminal device transmits and receives RF signals frequently. Subsequent to an antenna of the communication terminal device, the communication terminal device includes a radio frequency switch (also referred to as transmit/receive (T/R) switch) that switches between two states at a high frequency, where one state is for receiving RF signal and other state for transmitting RF signal. In the exemplary embodiments of the disclosure, a complementary metal-oxide-semiconductor (CMOS) switch is provided, where the CMOS switch is deigned to have a high reliability by coupling a body of a transistor of the CMOS switch to a bias voltage through a switch, where the insertion loss and isolation are improved for the operation of the CMOS switch.


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