The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2022
Filed:
Sep. 15, 2017
Mitsubishi Electric Corporation, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A multiplication layer on a semiconductor substrate of n-type contains Al atoms. An electric field control layer on the multiplication layer is of p-type, and includes a high-concentration area, and a low-concentration area lower in impurity concentration than the high-concentration area which is formed outside the high-concentration area. An optical absorption layer on the electric field control layer is lower in impurity concentration than the high-concentration area. A window layer of n-type formed on the optical absorption layer is larger in band gap than the optical absorption layer. A light-receiving area of p-type is formed apart from an outer edge of the window layer, and at least partly faces the high-concentration area through the window layer and the optical absorption layer. The guard ring area of p-type which the window layer separates from the light-receiving area penetrates through the window layer to extend into the optical absorption layer.