The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2022
Filed:
Feb. 16, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Cheng-Ta Wu, Chiayi County, TW;
Shiu-Ko Jangjian, Tainan, TW;
Chung-Ren Sun, Kaohsiung, TW;
Ming-Te Chen, Hsinchu County, TW;
Ting-Chun Wang, Tainan, TW;
Jun-Jie Cheng, Hualien County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor fin, a lining oxide layer, a silicon nitride based layer and a gate oxide layer. The semiconductor fin has a top fin surface, an upper fin side surface portion adjacent to the top fin surface, and a lower fin side surface contiguously connected to the upper fin side surface portion. The lining oxide layer peripherally encloses the lower fin side surface portion of the semiconductor fin. The silicon nitride based layer is disposed conformally over the lining oxide layer. The gate oxide layer is disposed conformally over the top fin surface and the upper fin side surface portion.