The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2022
Filed:
Jul. 14, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chun-Fai Cheng, Tin Shui Wai, HK;
Ka-Hing Fung, Zhudong Township, TW;
Li-Ping Huang, Taipei, TW;
Wei-Yuan Lu, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A field effect transistor includes a substrate and spacers over the substrate. The field effect transistor includes a channel recess cavity between the spacers, wherein a bottom-most surface of the channel recess cavity is parallel to the substrate top surface. The field effect transistor includes a gate stack, wherein the gate stack includes a bottom portion in the channel recess cavity and a top portion outside the channel recess cavity, the gate stack further includes a gate dielectric layer extending from the channel recess cavity along sidewalls of each of the pair of spacers, and the gate dielectric layer directly contacts the substrate below substrate top surface. The field effect transistor includes a strained source/drain (S/D) below the substrate top surface, wherein the strained S/D extends below the gate stack. The field effect transistor further includes a source/drain (S/D) extension substantially conformably surrounding the strained S/D.