The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2022
Filed:
Nov. 25, 2019
Globalfoundries U.s. Inc., Santa Clara, CA (US);
GlobalFoundries U.S. Inc., Santa Clara, CA (US);
Abstract
The disclosure provides transistor cells for integrated circuits and methods to form the same. A transistor cell according to the disclosure may include a substrate region including width between a first end and a second end, and a length between a third end and a fourth end in a direction orthogonal to the width. A first doped well (FDW) within the substrate region may be oppositely doped and may extend from the first end to a first interior boundary between the first and second ends of the substrate region, and from the third end to a second interior boundary between the third and fourth ends. A second doped well (SDW) within the substrate region may extend from the second end to a third interior boundary between the first and second ends, and the fourth end to a fourth interior boundary between the third and fourth ends.