The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2022
Filed:
Jun. 26, 2018
Infineon Technologies Austria Ag, Villach, AT;
Armin Tilke, Dresden, DE;
Hans Weber, Bayerisch Gmain, DE;
Christian Fachmann, Fuernitz, AT;
Roman Knoefler, Langebrueck, DE;
Gabor Mezoesi, Villach, AT;
Manfred Pippan, Noetsch, AT;
Thomas Rupp, Faak am See, AT;
Michael Treu, Villach, AT;
Armin Willmeroth, Friedberg, DE;
Infineon Technologies Austria AG, Villach, AT;
Abstract
In an embodiment, a method of fabricating a superjunction semiconductor device includes implanting first ions into a first region of a first epitaxial layer using a first implanting apparatus and nominal implant conditions to produce a first region in the first epitaxial layer comprising the first ions and a first implant characteristic and implanting second ions into a second region of the first epitaxial layer, the second region being laterally spaced apart from the first region, using second nominal implanting conditions estimated to produce a second region in the first epitaxial layer having the second ions and a second implant characteristic that lies within an acceptable maximum difference of the first implant characteristic.