The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2022

Filed:

Oct. 18, 2018
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Lanxiang Wang, Singapore, SG;

Ping Zheng, Singapore, SG;

Shyue Seng Tan, Singapore, SG;

Eng Huat Toh, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/414 (2006.01); H01L 29/786 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4145 (2013.01); H01L 21/84 (2013.01); H01L 29/78648 (2013.01);
Abstract

A sensor device includes a substrate, first and second source regions, first and second drain regions, first and second channel regions, and first and second gate structures disposed over the first and second channel regions respectively. The source regions and drain regions are at least partially disposed within the substrate. The second gate structure includes first and second gate elements, and a resistance region configured to provide a resistance to a second current flow through the second channel region. In use, the first gate structure may receive a solution, and a change in pH in the solution changes a first current flow through the first channel region. In turn, the second current flow through the second channel region changes to compensate for the change in the first current flow to maintain a constant current flow through the sensor device.


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