The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2022

Filed:

Apr. 26, 2019
Applicants:

Chongqing Boe Optoelectronics Technology Co., Ltd., Chongqing, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Wei Zhu, Beijing, CN;

Zhe Li, Beijing, CN;

Xiaoji Li, Beijing, CN;

Haoxiang Fan, Beijing, CN;

Lan Xin, Beijing, CN;

Peng Li, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/50 (2006.01); G02F 1/1335 (2006.01); G02F 1/1368 (2006.01); H01L 27/32 (2006.01); F21V 9/32 (2018.01); F21V 9/38 (2018.01); G02F 1/1362 (2006.01); G02F 1/13357 (2006.01); G02F 1/00 (2006.01); G02F 1/017 (2006.01);
U.S. Cl.
CPC ...
H01L 51/502 (2013.01); F21V 9/32 (2018.02); F21V 9/38 (2018.02); G02F 1/0063 (2013.01); G02F 1/1336 (2013.01); G02F 1/1368 (2013.01); G02F 1/133514 (2013.01); G02F 1/133602 (2013.01); G02F 1/133617 (2013.01); G02F 1/136222 (2021.01); H01L 27/322 (2013.01); G02F 1/01791 (2021.01); G02F 1/133614 (2021.01); G02F 2202/36 (2013.01);
Abstract

A quantum dot film, a quantum dot light-emitting assembly and a display device are provided. The quantum dot film includes: a quantum dot layer; and a conductive layer arranged on at least a side of the quantum dot layer along a thickness direction, and the conductive layer includes nano-sized metal particles, and at least a portion of the nano-sized metal particles are configured to generate a surface plasmon resonance under electromagnetic radiation. The luminescence efficiency and intensity of the quantum dot layer can be effectively improved by arranging the conductive layer on at least a side of the quantum dot layer.


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