The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Apr. 24, 2020
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Wenyin Weng, Shanghai, CN;
SHANGHAI HUALI INTEGRATED CIRCUIT CORPORATION, Shanghai, CN;
Abstract
A semiconductor FinFET device includes a first work function layer configured to form a first threshold voltage and a second work function layer is configured to form a second threshold voltage. As the device is on, the channel region is divided laterally into a first portion and a second portion, wherein the first portion is located under the first work function layer, and wherein the second portion is located under the second work function layer. The first and second work function layers are configured such that the second threshold voltage is greater than the first threshold voltage to provide a higher withstanding voltage. The first work function layer comprises TiN, and the second work function layer comprises TiN and TiAl; or the first work function layer contains TiAl, and the second work function layer comprises TiN and TiAl.