The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2022

Filed:

Aug. 05, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Chi-Yuan Shih, Hsinchu, TW;

Kai-Fung Chang, Taipei, TW;

Shih-Fen Huang, Jhubei, TW;

Yan-Jie Liao, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/75 (2013.01);
Abstract

In some embodiments, the present disclosure relates to a metal-insulator-metal (MIM) device. The MIM device includes a substrate, and a first and second electrode stacked over the substrate. A dielectric layer is arranged between the first and second electrodes. Further, the MIM device includes a titanium getter layer that is disposed over the substrate and separated from the dielectric layer by the first electrode. The titanium getter layer has a higher getter capacity for hydrogen than the dielectric layer.


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