The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2022

Filed:

Jun. 01, 2018
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Krishna Parat, Palo Alto, CA (US);

Richard Fastow, Cupertino, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11556 (2017.01); G11C 16/04 (2006.01); H01L 21/764 (2006.01); H01L 27/11524 (2017.01); H01L 27/1157 (2017.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); G11C 16/0408 (2013.01); G11C 16/0466 (2013.01); G11C 16/0483 (2013.01); H01L 21/764 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11582 (2013.01);
Abstract

Flash memory technology is disclosed. In one example, a flash memory component can include a plurality of conductive layers vertically spaced apart from one another and separated by voids, each of the plurality of conductive layers forming a word line. The memory component can also include a vertically oriented conductive channel extending through the plurality of conductive layers. In addition, the flash memory component can include a plurality of memory cells coupling the plurality of conductive layers to the conductive channel. Each word line can be associated with one of the plurality of memory cells. Associated devices, systems, and methods are also disclosed.


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