The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Dec. 11, 2020
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Wenyin Weng, Shanghai, CN;
SHANGHAI HUALI INTEGRATED CIRCUIT CORPORATION, Shanghai, CN;
Abstract
A method for making field effect transistors includes forming a connection leading out a gate structure arranged on one of a plurality of fins, and connections for source and drain and the gate structure are located on formation areas of different fins; forming a gate cap layer at the top of the gate structure to protect it on the same fin body and adjacent to the connections for source and drain; forming buried holes on the source and drain at both sides of the gate structure connection; forming a buried hole cap layer on the buried holes, to protect the buried holes which connect the source and the drain electrodes.