The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
May. 14, 2020
Applicant:
Elpis Technologies Inc., Ottawa, CA;
Inventors:
Praneet Adusumilli, Somerset, NJ (US);
Alexander Reznicek, Troy, NY (US);
Oscar van der Straten, Guilderland Center, NY (US);
Chih-Chao Yang, Glenmont, NY (US);
Assignee:
ELPIS TECHNOLOGIES INC., Ottawa, CA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 21/285 (2006.01); H01L 29/78 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 29/51 (2006.01); H01L 29/165 (2006.01); H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28088 (2013.01); H01L 21/2855 (2013.01); H01L 21/28568 (2013.01); H01L 21/76838 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/53261 (2013.01); H01L 23/53266 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 23/485 (2013.01); H01L 29/165 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 29/7848 (2013.01);
Abstract
After forming a contact opening in a dielectric material layer located over a substrate, a metal liner layer comprising a nitride of an alloy and a metal contact layer comprising the alloy that provides the metal liner layer are deposited in-situ in the contact opening by sputter deposition in a single process and without an air break. Compositions of the metal liner layer and the metal contact layer can be changed by varying gas compositions employed in the sputtering process.