The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Apr. 16, 2020
Applicant:
Innoscience (Zhuhai) Technology Co., Ltd., Zhuhai, CN;
Inventors:
Qiyue Zhao, Zhuhai, CN;
Chuan He, Zhuhai, CN;
Assignee:
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD., Zhuhai, CN;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0415 (2013.01); H01L 21/2654 (2013.01); H01L 29/66462 (2013.01);
Abstract
Some embodiments of the disclosure provide a method for forming a semiconductor device. The method includes: forming a plurality of semiconductor material layers on a doped substrate; removing a part of the plurality of semiconductor material layers to form an exposed doped substrate; and ion implanting a dopant into the exposed doped substrate to form a doped semiconductor structure, where the doped substrate and the doped semiconductor structure have different polarities.