The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Feb. 25, 2020
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Jisong Jin, Shanghai, CN;
Zejun He, Shanghai, CN;
Jia Ni, Shanghai, CN;
Yanhua Wu, Shanghai, CN;
Junling Pang, Shanghai, CN;
Abstract
A semiconductor device and a method for forming the semiconductor device are provided. The method includes providing a layer to-be-etched including a first sub-trench region and a second sub-trench region. The method also includes forming a first mask layer over the layer to-be-etched and a second mask layer over the first mask layer, and forming a first sub-trench disposed over the first sub-trench region in the second mask layer. In addition, the method includes forming a first divided trench in the first mask layer and forming a second sub-trench disposed over the second sub-trench region in the second mask layer. Further, the method includes forming a first divided filling layer in the first divided trench, and forming a first middle trench in the first mask layer. The first divided filling layer divides the first middle trench in a second direction.